Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD
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The ALD temperature window for HfO2 is 150 - 300oC. The TEMAHf precursor is heated to 120 or 125oC (T210) and the heater (T211) is set to 140 oC during deposition. Remember to set the values in the "MANUAL" tab and to change them to back after deposition. These values may not be exceeded to prevent precursor decomposition.
HfO2 standart recipe
HfO2 deposition using TEMAHf and H2O precursors
The test was done with 300 cycles at 250 oC where the growth rate was measured to be 0.0804 nm/cycle.
| TEMAHf | H2O | |
|---|---|---|
| Nitrogen flow | 150 sccm | 120 sccm |
| Pulse time | 1.6 s | 0.1 s |
| Purge time | 8.0 s | 4.0 s |