Specific Process Knowledge/Characterization/PL mapper

Feedback to this page: click here

PhotoLuminescense Mapper RPM2000

Photoluminiscense mapping is a non-contact, non-destructive technique for mapping out uniformity of alloy composition, material quality and defects in substrates and of III-V epiwafers. The Rapid Photoluminiscense Mapper (RPM) is equipped with 3 lasers for PL measurements and a white-light source to map out thickness and reflectance of eg layers, microcavities and VCSELs.

It can also be used to map out voids after silicon wafer-bonding. This is done using the reflectance mapping and is using the fact that silicon is transparent for wavelengths above ~1000nm. A void will therefor change the reflectance in that wavelength range. See datasheet below (Thanks to Jens Hemmingsen for the data).

The user manual and contact information can be found in LabManager:

PL mapper

Performance	Excitation	~100 mW @ 405 nm (~70mW on sample) ~10 mW @ 532 nm ~10 mW @ 980 nm white light source for thickness and reflectance measurements
	Detection	integrated signal: Si and/or InGaAs detector Spectral scan: Si CCD (up to 1100 nm), InGaAs photodiode array (900-1700 nm)
	Gratings	600 lines/mm (single frame: 60 nm @ 400 nm) 300 lines/mm (single frame: 120 nm @ 900 nm) 150 lines/mm (single frame: 270 nm @ 1550 nm)
	Chuck sizes	2", 3" and 4"
	Resolution	Minimum spatial resolution 100 µm spotsize ~100 µm
	Wavelength accuracy	< +/- 1 nm
Materials	Allowed substrate materials	III-V Silicon
Materials	Forbidden materials	Do not map any wafers that might leave residues in the machine
Software	RPM viewer	Software (free) to view and re-analyse the maps and spectra can be found on Labmanager. Direct link to file download RPM2000 analysis software. The software will request you to get a (free) license key from Nanometrics.