Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD
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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Deposition of SiN with PECVD4 
| Parameter | |
|---|---|
| Coil Power [W] | 1300 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 0 |
| He flow [sccm] | 174 |
| C4F8 flow [sccm] | 5 |
| H2 flow [sccm] | 4 |
| Pressure [mTorr] | 4 |
| Material to be etched | Etch rate using SiO2_res |
|---|---|
| Thermal oxide |
|
| TEOS oxide (5% load) | 233nm/min ±0.7% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@danchip |
| PECVD1 (standard) oxide (5% load) | 242nm/min ±0.6% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@danchip |
| Al2O3 from the ALD |
|
| Silicon rich nitride from furnace B2 | 136nm was etched in 1min (whole wafer) - etched in October 2015 by bghe@danchip |
| Cr | 6 nm/min (1:33 to SiO2) fall 2016 by Martin Lind Ommen @nanotech |
| Al | 25nm/min (1:8 to SiO2) fall 2016 by Martin Lind Ommen @nanotech |
Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride
Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| SINSTD80 | 30 | 20 | 1000 | 500 | 80 | |
| SINSTD96 | 30 | 20 | 1000 | 500 | 96 | |
| 1SiN | 40 | 20 | 1000 | 700 | 150 |
Expected results
| Recipe name | Deposition rate [nm/min] | RI | Uniformity [%] | Stress [MPa] | BHF etch rate [Å/min] | Comments |
| 1SiN |
Deposition rate in the middle of two wafers: 49nm/min+-1nm/min (2015-04-24 BGHE) |
~2-4% (2015-04-24 BGHE) |
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| SINSTD80 | 68nm/min (2014-07-07 JML)- unstable deposition rate | |||||
| SINSTD96 - unstable deposition rate |
Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride
| Quality Controle (QC) for PECVD3 | ||||||||||||||||||||||
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Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| MFSiNLS2 | 30 | 30 | 1470 | 845 | 100HF 7.8s
100LF 2.2s |
Low stress nitride - standard recipe. The latest measured values can be seen in the process control sheet in LabManager. |
| MFSiNLS | 30 | 30 | 1470 | 650 | 20HF 6s
30LF 2s |
Low stress nitride - old standard recipe. This one is not running well any more. |
| LFSiN | 30 | 15 | 1470 | 550 | 60LF | Compressive stress |
| HFSiN | 30 | 42 | 1470 | 900 | 20HF | Tensile stress |
LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress
Expected results
| Recipe name | Deposition rate [Å/min] | RI | Uniformity [%] [Std./mean] |
Stress [MPa] | KOH etch rate [Å/min] | BHF etch rate [Å/min] | See more |
| MFSiNLS2 | ~422 (bghe Feb 2016) | ~2.03 | ~2 | ~6 (bghe Feb 2016) | ~2.1 (bghe Feb 2016) | ~? | see DOE |
| MFSiNLS | ~107 | ~1.99 | ~4 | ~-30 | ~2.5 | ~250 | . |
| LFSiN | ~550 | ~1.96 | ~3 | ~-630 | . | . | . |
| HFSiN | ~130 | ~1.97 | ~2 | ~460 | . | . | . |
Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. Expired!:PECVD1 has been decommissioned
Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1nitride | 30 | 20 | 1000 | 500 | 80 | |
| 1nit_std | 40 | 20 | 1960 | 550 | 60 | Process control recipe |
Expected results
| Recipe name | Deposition rate [nm/min] | RI | Uniformity [%] | Stress [MPa] | BHF etch rate [Å/min] | Comments |
| 1nitride | ||||||
| 1nit_std | ~32 | 1.89 | ~1 | ~700 | The latest measured values can be seen in the process control sheet in LabManager |