Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/Al2O3 deposition using ALD2

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Results from the acceptance test

Al₂O₃ deposition using TMA and H₂O precursors

The test was done with 500 cycles at 300 °C where the growth rate was measured to be 0.8544 nm/cycle.

	TMA	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.1 s	0.1 s
Purge time	3.0 s	4.0 s

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  Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer. The uniformity is shown in the figure above and the thickness values can be seen in the table below.

Parameter	Average	Min.	Max.	Std.Dev	%Range
Thickness (nm)	48.72	48.26	49.37	0.40	2.2856

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  AFM measured roughness 0.240 nm.

Pernille Voss Larsen, Mikkel Dysseholm Mar and Tanja Amport, DTU Danchip, 2016-2017.

Al₂O₃ with O₃

The test was done with 500 cycles at 300 °C where the growth rate was measured to be 0.0752 nm/cycle.

	TMA	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.2 s	0.1 s
Purge time	3.0 s	4.0 s

• 
  Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer.The uniformity is shown in the figure above and the thickness values can be seen in the table below.

Parameter	Average	Min.	Max.	Std.Dev	%Range
Thickness (nm)	37.63	36.51	39.04	0.81	6.7448

• 

The AFM measured roughness was 0.272 nm.

Pernille Voss Larsen, Mikkel Dysseholm Mar and Tanja Amport, DTU Danchip, 2016-2017.

Other references

Since the ALD2 is very similar to the ALD1 if the thermal lid is installed you might want to get further information, which can be found here.