Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2

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Result from acceptance test

SiO₂ deposition using SAM25 and O₂ plasma precursors

The test was done with 150 cycles at 300 °C where the growth rate was measured to be 0.1222 nm/cycle.

	SAM24	O2 plasma
Nitrogen flow	100 sccm	200 sccm
Pulse time	1.6 s	10.0 s
Purge time	8.0 s	2.0 s

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  Uniformity profile across 150 mm Si wafer based on 49 measurement points measured with ellipsometer. The uniformity is shown in the figure above and the thickness values can be seen in the table below.

Parameter	Average	Min.	Max.	Std.Dev	%Range
Thickness (nm)	18.35	17.88	18.82	0.20	5.1750

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AFM measurement roughness 0.172 nm.

SiO₂ deposition on trenches using SAM25 and O₂ plasma precursors

The test was done with 200 cycles at 300 °C where the average growth rate was measured to be 0.1629 nm/cycle. (Average thickness/number of cycles)

	SAM24	O2 plasma
Nitrogen flow	100 sccm	200 sccm
Pulse time	1.6 s	20.0 s
Purge time	20.0 s	10.0 s

Additionally the picoflow was used for the SAM24 precursor.

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Compared to the HfO₂ covered trenches the SiO₂ coated seem homogeneous.