Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/Al2O3 deposition using ALD2

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Results from the acceptance test

Al2O3 deposition using TMA and H2O precursors

The test was done with 500 cycles at 300 °C where the growth rate was measured to be 0.8544 nm/cycle.

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 3.0 s 4.0 s
Parameter Average Min. Max. Std.Dev %Range
Thickness (nm) 48.72 48.26 49.37 0.40 2.2856

Al2O3 with O3

The test was done with 500 cycles at 300 °C where the growth rate was measured to be 0.0752 nm/cycle.

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.1 s
Purge time 3.0 s 4.0 s
Parameter Average Min. Max. Std.Dev %Range
Thickness (nm) 37.63 36.51 39.04 0.81 6.7448

The AFM measured roughness was 0.272 nm.

Other references

Since the ALD2 is very similar to the ALD1 if the thermal lid is installed you might want to get further information, which can be found here.