Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiO2 deposition using ALD2

Result from acceptance test

TiO₂ deposition at 150 C (amorphous TiO₂) using TiCl₄ and H₂O precursors

The test was done with 500 cycles where the growth rate was measured to be 0.0385 nm/cycle.

	TiCl4	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.1 s	0.1 s
Purge time	3.0 s	4.0 s

• 
  Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer. The values for the grown oxide thickness can be seen in the table below.

Parameter	Average	Min.	Max.	Std.Dev	%Range
Thickness (nm)	19.27	18.70	19.82	0.34	5.7947

• 
  AFM measurement roughness 0.209 nm.

TiO₂ deposition at 300 C (anastase TiO₂) using TiCl₄ and H₂O precursors

The test was done with 500 cycles there the growth rate was measured to be 0.0409 nm/cycle.

	TiCl4	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.1 s	0.1 s
Purge time	3.0 s	4.0 s

• 
  Uniformity profile across 150 mm Si wafer based on 13 measurement points measured with ellipsometer. The measured oxide thickness is also shown in the table below.

Parameter	Average	Min.	Max.	Std.Dev	%Range
Thickness (nm)	20.46	19.85	21.02	0.35	5.6791

• 
  AFM measurement roughness 0.641 nm.

TiO₂ on trenches

	TiCl4	TiCl4	H2O	H2O
Nitrogen flow	150 sccm	150 sccm	200 sccm	200 sccm
Pulse time	0.1 s	0.1 s	0.1 s	0.1 s

Other references

Since the ALD2 is very similar to the ALD1 if the thermal lid is installed you might want to get further information, which can be found here.