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AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Lesker)	Atomic layer deposition (ALD Picosun R200)
General description	Sputter deposition of AZO	Atomic layer deposition of AZO
Pre-clean	RF Ar clean	RF Ar clean
Layer thickness	10Å to 1µm*	10Å to
Deposition rate	2Å/s to 15Å/s	~0.3Å/s
Batch size	Up to 1x4" wafers smaller pieces	Pieces or 1x4" wafer or 1x6" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment

* For thicknesses above 200 nm permission is required.