Specific Process Knowledge/Thin film deposition/PECVD/Pre-release tests on PECVD4

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Plan for test runs on PECVD4 before release

Test of standard recipes, dep. rate, RI and stress
Recipe	Wafer ID	Dep. rate [nm/min]	RI	Unif. [%]	Stress	Comments	SiH4	NH3	N2O	N2	B2H6	PH3	Pressure	APC	Power	Load	Tune	Temp	Time
PREDEP	s000008	377 nm/min	1.489	±3.1%			50		1800				650		200LF	~10	~53	250/300	04:00
LFSIO	s000009	92 nm/min	1.480	±1.9%		Without carrier	12		1420	392			550		60LF	~10	~53	2250/300	01:15
LFSIO	s000011	78 nm/min	1.483	±2.1%		With carrier	12		1420	392			550		60LF	~10	~53	2250/300	01:15
HFSiO	s000012	64 nm/min	1.477	±0.5%		with carrier	10		1420	392			900		30HF	~55	~58	250/300	02:00
LFSiN	s000013	43 nm/min	1.983	±4.4%		with carrier	40	20		1960			550		60LF	~10	~53	250/300	02:00
HFSiN	S000015	12.4 nm/min	2.017	±1.2%		With carrier	40	55		1960			900		20HF	~56	~58	250/300	10:00
MFSiN	S000016	46.8 nm/min	2.083	±3.3%		With carrier	40	40		1960			900		20HF 6"/20LF 2"	63/25	33auto/92man	250/300	10:00
LFSIO st	s000019	75.4	1.480	±2.7%	compressive: 308.9 MPa	Stress test 1µm - stress wafer no. 1	12		1420	392			550		60LF	~10	~53	2250/300	13:00
HFSiO st	S000020	63.1	1.476	±0.3%	compressive: 250.5 MPa	Stress test 1µm - stress wafer no. 2	10		1420	392			900		30HF	~55	~58	250/300	16:00
LFSiN st	S000021	40.4	1.984	±3.9%	Compressive: 565.4 MPa	Stress test 1µm	40	20		1960			550		60LF	~10	~53	250/300	23:00
HFSiN st	S000033	12.17 nm/min	2.021	±1.6	Tensile: 431.6 MPa	Stress test 0.681 µm	40	55		1960			900		200HF	~56	~58	250/300	56:00
HFSiN st - 200W	S000022	61.7	2.067	±4.0%	Tensile: 56.1MPa	Stress test 3.456 µm	40	55		1960			900		200HF	~56	~58	250/300	56:00
MFSiN st	S000024	46.2	2.087	±3.6	Tensile: 38.1 MPa	Stress test ~700nm	40	40		1960			900		20HF 6"/20LF 2"	59/0	60auto/59man	250/300	14:56
Standard Waveguide	S000028	159.5	1.462	±0.8	Compressive: 121.9 MPa		17		2000				300		700LF	~35	~40	250/300	40:00
D		D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D
D		D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D	D

Run-to-Run Reproducibility

Test of LFSiO at different chamber conditions
Recipe	Wafer ID	Dep. rate [Å/min]	RI	Unif. [%]	Comments	SiH4	NH3	N2O	N2	B2H6	PH3	Pressure	APC	Power	Load	Tune	Temp	Time
LFSIO	S000019	75.4	1.480	±2.7%	1 µm At 1.5 µm chamber deposition	12		1420	392			550		60LF	~10	~53	2250/300	13:00
LFSIO	s000026	76.2	1.481	±3.5%	1 µm At 8.4 µm chamber deposition	12		1420	392			550		60LF	~10	~53	2250/300	13:00