Specific Process Knowledge/Thin film deposition/Deposition of NiV

From LabAdviser

Feedback to this page: click here

Sputtering of Nickel Vanadium

Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker) or Wordentec


In the chart below you can compare the different deposition equipment.

Sputter deposition (Sputter-System Lesker) Sputter deposition (Wordentec)
General description Sputter deposition of NiV Sputter deposition of NiV
Pre-clean RF Ar clean RF Ar clean
Layer thickness About 10Å to 5000Å
Deposition rate Depending on process parameters. Depending on process parameters.
Batch size
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers(No substrate heating)
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Target size 2 inch sputter target 6 inch sputter target
Comment Sputter target with NiV composition: Ni/V 93/7%

Substrate rotation Substrate RF Bias (optional)

Sputter target with NiV composition: Ni/V 93/7%

No substrate rotation No substrate RF Bias

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiV&oldid=25145"