Specific Process Knowledge/Thin film deposition/Deposition of Silicon

PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:

	Sputter (Alcatel)	Furnace PolySi
Batch size	Up to 1x4" wafers smaller pieces	1-25 wafers of 4" For other sizes ask the furnace team
Pre-clean	RF Ar clean	RCA clean for wafers that are not fresh form the box.
Layer thickness	10Å to 1µm	~50Å to 2µm, if thicker layers are needed please ask the furnace team.
Deposition rate	2Å/s to 15Å/s	undoped, boron doped:~100Å/min Phospher doped:~20Å/min
Process temperature	?	560 oC (amorph) and 620 oC (poly)
Step coverage	Poor	Good
Adhesion	Bad for pyrex, for other materials we do not know	Good for fused silica, silicon oxide, silicon nitride, silicon
Substrate material allowed	Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape	Fused silica, Silicon, oxide, nitride
Doping facility	None	Can be doped during deposition with Boron and/or Phosphorous

Sputtered Silicon in the Alcatel

The parameter(s) changed	New value(s)	Deposition rate
Standard parameters	None
Power	400W	3.8 Å/s