Specific Process Knowledge/Thin film deposition/Deposition of Silicon

From LabAdviser

PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace.In the chart below you can compare the two different deposition methodes:


Sputter (Alcatel) Furnace PolySi
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 1-25 wafers of 4"
  • For other sizes ask the furnace team
Pre-clean RF Ar clean RCA clean for wafers that are not fresh form the box.
Layer thickness 10Å to 1µm ~50Å to 2µm, if thicker layers are needed please ask the furnace team.
Deposition rate 2Å/s to 15Å/s
  • undoped, boron doped:~100Å/min
  • Phospher doped:~20Å/min
Process temperature ? 560 oC and 620 oC
Step coverage Poor Good
Adhesion Bad for pyrex, for other materials we do not know Good for quartz, silicon oxide, silicon nitride, silicon
Substrate material allowed Pyrex, Quartz, Silicon, metals, oxide, nitride, blue tape Quartz, Silicon, oxide, nitride
Doping facility None Can be doped during deposition with Boron and/or Phosphorous


Sputtered Silicon in the Alcatel

The parameter(s) changed New value(s) Deposition rate
Standard parameters None
Power 400W 3.8 Å/s
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