Specific Process Knowledge/Bonding

Choose bonding method

.	Eutectic bonding	Fusion bonding	Anodic bonding
General description	For bonding an interphase that makes an eutecticum eg. Au/Si (two different matarials).	For bonding two identical materials eg. Si/Si.	For bonding Si and Glass.
Bonding temperature	Depending on the eutecticum 310 $o$ C to 400 $o$ C.	Depending on defects 50 $o$ C to 400 $o$ C.	Depending on the voltage 300 $o$ C to 500 $o$ C Standard is 400 $o$ C.
Annnealing temperature	No annealing	1000 $o$ C in the bond furnace C3	No annealing
Max. scan range z	<100Å to~0.3mm	50Å to 262µm	1 µm (can go up to 5 µm under special settings)
Resolution xy	up to 5900 data points per profile	down to 0.067 µm	Depending on scan size and number of samples per line and number of lines - accuracy better than 2%
Resolution z	1Å or 25Å	1Å, 10Å or 20Å	<1Å - accuracy better than 2%
Max. scan depth [µm] (as a function of trench width W)	0.87(W[µm]-5µm)	1.2(W[µm]-5µm)	~1 with standard cantilever.
Tip radius	5 µm 60^o cone	5 µm 45^o cone	<12 nm on standard cantilever
Stress measurement	Can be done	Can be done	Cannot be done
Surface roughness	Can be done on a line scan	Can be done on a line scan	Can be done on a selected surface area