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Specific Process Knowledge/Etch/III-V ICP/SiO2

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Parameter	Resist mask
Coil Power [W]	200
Platen Power [W]	25
Platen temperature [^oC]	0
CF₄ flow [sccm]	20
H₂ flow [sccm]	10
Pressure [mTorr]	3

Results	Test by Artem Shikin @ Fotonik
Etch rate of PECVD BPSG	39.4nm/min (22-01-2016)
Selectivity to resist [:1]	Not known
Wafer uniformity (100mm)	Not known
Profile [^o]	Not known
Wafer uniformity map (click on the image to view a larger image)	Not known
SEM profile images	NONE
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