Specific Process Knowledge/Etch/III-V ICP/SiO2

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Parameter Resist mask
Coil Power [W] 800
Platen Power [W] 100
Platen temperature [oC] 20
CF4 flow [sccm] 30
H2 flow [sccm] 10
Pressure [mTorr] 4


Results Test on wafer with 50% load (Travka 50), by BGHE @danchip
Etch rate of PECVD BPSG 39.4nm/min (22-01-2016)
Selectivity to resist [:1] Not known
Wafer uniformity (100mm) Not known
Profile [o] Not known
Wafer uniformity map (click on the image to view a larger image) Not known
SEM profile images NONE
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