Specific Process Knowledge/Thin film deposition/PECVD/Doping
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Boron-doping by use of BSG glass deposited in PECVD2
Results from Joachim Dahl Thomsen, Nanotech, 2014
Recipe
| Recipe name | SiH4 flow [sccm] | N2O flow [sccm] | N2 flow [sccm] | B2H6 flow [sccm] | PH3 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1PBSG | 17 | 1600 | 0 | 120, 130, 140, 160, 240 | 0 | 400 | 380 | BSG glass for driving in boron in Silicon |
5 tests were made where only the B2H6 flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in 440 nm Oxide. The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF.
The wafers were then analyzed by SIMS and the results are shown in the figure below:
Boron-doping by use of BSG glass deposited in PECVD2
Results from Trine Holm Christensen, Space, Feb. 2015
Recipe
| Recipe name | SiH4 flow [sccm] | N2O flow [sccm] | N2 flow [sccm] | B2H6 flow [sccm] | PH3 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1PBSG | 17 | 1600 | 0 | 120, 130, 140 | 0 | 400 | 380 | BSG glass for driving in boron in Silicon |
3 tests were made where only the B2H6 flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in approximately 400nm Oxide.
The wafers were going through several annealing and oxidation step:
The total thermal budget for the wafers:
Anneal in Furnace (C1): ANN1000, 30 min in N2, strip of oxide in a 25 min BHF etch.
Wet oxidation in Furnace (C1): WET1050, 30 min, no further anneal
Anneal in Furnace (C1): ANN950, 60 min in N2
The wafers were then analyzed by SIMS and the results are shown in the figure below:
Measured peak concentrations and sheet resistances:
| Wafer | Peak Concentration
[atoms/cm3] |
Sheet Resistance
[Ω/sq] |
| BSG120 | 1.75*1019 | 56.4 |
| BSG130 | 2.44*1019 | 36.2 |
| BSG140 | 2.36*1019 | 40.3 |