Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Si etch using AOE
Si mask etch has been tried out by Yunhong Ding @ Fotonik
| Parameter | Recipe name: Si_etch |
|---|---|
| Coil Power [W] | 800 |
| Platen Power [W] | 30 |
| Platen temperature [oC] | 20 |
| CFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} F flow [sccm] | 55 |
| SF flow [sccm] | 75 |
| Pressure [mTorr] | 20 |
| Typical results | Resist mask | Resist mask |
|---|---|---|
| Si etch rate | ~1.12 µm/min - tested by Yunhong Ding @fotonik | ~1.68 µm/min - tested by bge@danchip |
| Selectivity to photo resist | 1:~2.6 - tested by Yunhong Ding @fotonik | 1:~4 - tested by bge@danchip |
| Etch rate in SiO2 | ~0.34 µm/min - tested by Yunhong Ding @fotonik | 0.4 µm/min - tested by bge@danchip |
| Profile [o] | not tested | not tested |
| Images | . | . |
| Comments | The profile is supposed to be ~88dg but it has not been confirmed | . |
| Etch rate in silicon rich nitride from furnace B2 | Etched 119nm in 1 min - test by bge@danchip October 2015 | . |