Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride

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Deposition of Aluminium Nitride

AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen.

• Al_xN_y in PVD co-sputter/evaporation
  

Only one method at the moment

	Cryofox PVD co-sputter/evaporation
Generel description	Reactive Sputtering (Al target) or AlN target sputtering
Stoichiometry	Depend on the targets power
Film Thickness	0nm - 200nm
Deposition rate	Not tested
Step coverage	Very good
Process Temperature	Up to 400oC
Substrate size	100 mm wafers (Up to 12 wafers at a time) 150 mm wafers (Up to 4 wafers at a time)
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Photoresist PMMA Mylar SU-8 Any metals