Specific Process Knowledge/Thermal Process/Annealing
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Annealing
At Danchip we have four furnaces and an RTP (Rapid thermal annealing) that can be used annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Multipurpose Anneal furnace, Noble furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.
A 20 minutes N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.
Comparison of the annealing furnaces
General description | Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2. | Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | Annealing of almost all materials on silicon wafers. | Rapid thermal annealing | Annealing, oxidation and resist pyrolysis of different samples |
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Annealing gas |
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Process temperature |
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Substrate and Batch size |
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Allowed materials |
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