Specific Process Knowledge/Characterization

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Choose characterization topic

• Element analysis
• Measurement of film thickness and optical constants
• Photoluminescence mapping
• Sample imaging
• Sample preparation for inspection
• Stress measurement
• Wafer thickness measurement
• Topographic measurement

• Contact angle measurement
• Four-Point_Probe (Resistivity measurement)
• Carrier density (doping) profiler
• Scanning Electron Microscopy

Choose equipment

• FIB-SEM FEI QUANTA 200 3D
• Dual Beam FEI Helios Nanolab 600
• SEM FEI Nova 600 NanoSEM
• SEM FEI Quanta FEG 200 ESEM
• SEM LEO
• SEM JEOL
• SEM Zeiss
• SEM Zeiss Supra 60 VP

• AFM - Atomic Force Microscopy

• Optical Profiler (Sensofar)
• Dektak XTA_new
• Dektak 8 stylus profiler
• III V Profiler

• Optical microscope

• Ellipsometer
• Filmtek 4000
• Prism Coupler
• PL mapper - Photoluminescence mapper

• Atomika SIMS
• XPS-ThermoScientific

• Drop Shape Analyzer

• 4-Point Probe

• Thickness Measurer

• Probe station

• KLA-Tencor Surfscan 6420

• III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)
• III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)
• X-Ray Diffractometer
• X-Ray Diffractometer
• SEM FEI - This instrument has been relocated to CEN