Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange

**Comparison of processes before and after the change of showerhead in December 2014**
Process		Before			After
Name/Type	Description	Wafer ID	Comment	SEM images	Wafer ID	Comment	SEM images
Continuous black silicon recipe on blank wafer	15 mins, -10 degrees, 32 mtorr, 60 sccm SF₆, 55 sccm O₂, 70 W platen	S004592	Wafer centre		S004679	Wafer centre
Continuous black silicon recipe on blank wafer		S004592	Wafer edge		S004679	Wafer edge
Switched etch of 1.8 µm polysilicon on BOX patterned with DUV	50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF₆, 0/5 sccm O₂, 50/20 sccm C₄F₈, 600/400 W coil, 0/40 W platen	S004593	6" wafer		S004679	Wafer centre
		S004593	Wafer edge		S004679	Wafer edge