Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange
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Comparison of processes before and after the change of showerhead in December 2014
Process
Before
After
Name/Type
Description
Wafer ID
Comment
SEM images
Wafer ID
Comment
SEM images
Continuous black silicon recipe on blank wafer
15 mins, -10 degrees, 32 mtorr, 60 sccm SF
6
, 55 sccm O
2
, 70 W platen
S004592
Wafer centre
S004679
Wafer centre
S004592
Wafer edge
S004679
Wafer edge
Switched etch of 1.8 µm polysilicon on BOX patterned with DUV
50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF
6
, 0/5 sccm O
2
, 50/20 sccm C
4
F
8
, 600/400 W coil, 0/40 W platen
S004593
6" wafer
S004679
Wafer centre
S004593
Wafer edge
S004679
Wafer edge
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