Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange

Comparison of processes before and after the change of showerhead in December 2014

Process		Before			After
Name/Type	Description	Wafer ID	Comment	SEM images	Wafer ID	Comment	SEM images
Continuous black silicon recipe on blank wafer	15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen	S004592	Wafer centre		S004679	Wafer centre
		S004592	Wafer edge		S004679	Wafer edge
Switched polysilicon etch on DUV wafer, (D/E) indicate Dep and Etch	50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen	S004592	Wafer centre		S004679	Wafer centre
		S004592	Wafer edge		S004679	Wafer edge