Specific Process Knowledge/Lithography/Baking

From LabAdviser

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Comparing baking methods

Hotplate: 90-110C Hotplate 1 (SU8) and 2 Fume hood hotplates Oven 90C Oven: 120C - 250C Oven 250C
Purpose

Programmable contact bake

  • Soft bake
  • PEB

Programmable, ramped contact bake

  • Soft bake of SU-8
  • PEB of SU-8

Manual contact bake

  • Soft bake

Manual convection bake

  • Soft bake

Manual convection bake

  • Hard bake

Manual convection bake

  • Dehydration
Temperature

Maximum 120°C

Maximum 250°C

Maximum 300°C

Maximum temperature may be limited on the individual hotplate

Fixed at 90°C

120 - 250°C

Return to 120°C after use

Fixed at 250°C

Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • pieces
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers
  • pieces
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types except type IV

Respect the allowed materials on the associated spin coater

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and high Tg polymer substrates

Film or pattern of all types except resist

Restrictions III-V, copper, steel substrates

Pb, Te films

III-V substrates unless specifically stated

Respect the restrictions on the associated spin coater

III-V substrates

Pb, Te films

III-V, copper, steel substrates Resist is not allowed


Hotplates

Hotplate: 90-110C

Location of Hotplate: 90-110C in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C


Hotplate 1 (SU8) and Hotplate 2 (SU8)

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Fume hood hotplates

This section is under construction

Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.


Ovens

Oven 90C

Oven 90C is situated in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

Oven: 120C - 250C

Oven: 120C - 250C is Situated in C-1

Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist.

The set-point can be varied, but should always be returned to 120°C after use.

The user manual, and contact information can be found in LabManager: Oven: 120C - 250C

Oven 250C for pretreatment

Oven 250C for pretreatment is situated in C-1

See Oven 250C