Specific Process Knowledge/Lithography/Baking
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Comparing baking methods
Hotplate: 90-110C | SU8 hotplates | Fumehood hotplates | Oven 90C | Oven: 120C - 250C | Oven 250C | |
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Use |
Soft bake Post-exposure bake (PEB) |
Soft bake Post-exposure bake (PEB) |
Soft bake |
Soft bake |
Hard bake |
Dehydration |
Temperature |
Maximum 120°C |
Maximum 250°C |
Maximum 250°C |
Fixed 90°C |
120 - 250°C |
Fixed 250°C |
Substrate size |
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Allowed materials |
Silicon, glass, and polymer substrates Film or pattern of all types |
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Restrictions | Type IV and resist/polymer on polymer substrate | Wafers with metal is not allowed | Resist is not allowed |
Hotplates
Hotplate: 90-110C
Hotplate: 90-110C is used for baking of 2" - 6" wafers.
The user manual, and contact information can be found in LabManager: Hotplate: 90-110C
SU8 hotplates
We have two dedicated SU-8 hotplates in C-1.
Users can control the ramp-time, the baking temperature, and the baking time.
The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)
Fumehood hotplates
Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.
Ovens
Oven 90C
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.
The user manual, and contact information can be found in LabManager: Oven 90C
Oven: 120C - 250C
The user manual, and contact information can be found in LabManager: Oven: 120C - 250C
Oven 250C for pretreatment
See Oven 250C