Specific Process Knowledge/Lithography/Baking

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Comparing baking methods

	HMDS	Buffered HF-Clean	Oven 250C
Generel description	Vapor priming	Native oxide strip	Dehydration
Temperature	hexamethyldisilazane (HMDS)	12%HF with Ammoniumflouride	none
Substrate size	50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafers	100 mm wafers 150 mm wafers
Allowed materials	Silicon, glass, and polymer substrates Film or pattern of all types	Silicon Poly Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist Blue film	Silicon Silicon Oxide Silicon Nitride Glass
Restrictions	Type IV and resist/polymer on polymer substrate	Wafers with metal is not allowed	Resist is not allowed

Hotplates

Fumehood hotplate

Right: Hotplate 90 °C situated in C-1

Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.

Hotplate: 90-110C

Location of Hotplate: 90-110C in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C

SU8 hotplates

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Ovens

Oven 90C

Oven 90 °C: positioned in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

Oven: 120C - 250C

The user manual, and contact information can be found in LabManager: Oven: 120C - 250C

Oven 250C for pretreatment

Oven 250C for pretreatment: positioned in C-1

Oven 250C