Specific Process Knowledge/Lithography/Baking
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Comparing baking methods
| HMDS | Buffered HF-Clean | Oven 250C | |
|---|---|---|---|
| Generel description |
Vapor priming |
Native oxide strip |
Dehydration |
| Chemical |
hexamethyldisilazane (HMDS) |
12%HF with Ammoniumflouride |
none |
| Substrate size |
|
|
|
| Allowed materials |
Silicon, glass, and polymer substrates Film or pattern of all types |
|
|
| Restrictions | Type IV and resist/polymer on polymer substrate | Wafers with metal is not allowed | Resist is not allowed |
Hotplates
Fumehood hotplate

Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.
Hotplate: 90-110C

Hotplate: 90-110C is used for baking of 2" - 6" wafers.
The user manual, and contact information can be found in LabManager: Hotplate: 90-110C
SU8 hotplates

We have two dedicated SU-8 hotplates in C-1.
Users can control the ramp-time, the baking temperature, and the baking time.
The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)
Ovens
90 C oven

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.
The user manual, and contact information can be found in LabManager: Oven 90C
120 C oven

120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min.
250 C oven for pretreatment

250 C oven for burning resist

This oven is used for "burning" the resist, therefore not considered clean.