Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD
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The ALD window for depostion of Titanium oxide ranges from 120 oC to 350 oC. XPS measurements shows that at temperatures below 120 oC the TiO3 layer will be contaminated by Cl molecules.
All results shown on this page have been obtained using the "TiO2" recipe on new Si(100) wafers with native oxide:
Recipe: TiO2
Temperature: 150 oC - 350 oC
| TMA | H2O | |
|---|---|---|
| Nitrogen flow | 150 sccm | 200 sccm |
| Pulse time | 0.1 s | 0.1 s |
| Purge time | 3.0 s | 4.0 s |