Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)/BHF etch rates
Etch rate in | BHF | 5% HF | 30% HF |
---|---|---|---|
Wet Thermal Oxide [nm/min]1 | 78.19 | 24.89 | 282.85 |
TEOS [nm/min] | 265 | 153 | |
PECVD1 (Standard) Oxide [nm/min] | 147 | 87 | |
Silicon Rich Nitride [nm/min]1 | 0.33 | 0.60 | 2.6 |
Stochiometric Nitride Si3N4 [nm/min]2 | 0.75 |
1The measured etch rates have been made and donated by Eric Jensen and Rolf Møller-Nielsen from DTU-Nanotech, October 2013.
2The measured etch rates have been made and donated by Morten Bo Mikkelsen from DTU-Nanotech, March 2013.