Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)/BHF etch rates

Etch rate in	BHF	5% HF	30% HF
Wet Thermal Oxide [nm/min]	78.19	24.89	282.85
TEOS [nm/min]	265	153
PECVD1 (Standard) Oxide [nm/min]	147	87
Silicon Rich Nitride [nm/min]	0.33	0.60	2.6
Stochiometric Nitride Si3N4 [nm/min]	0.75

The measured etch rates have been made and donated by Eric Jensen and Rolf Møller-Nielsen from DTU-Nanotech, October 2013.

The measured etch rates have been made and donated by Morten Bo Mikkelsen from DTU-Nanotech, March 2013.