Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)/BHF etch rates

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Revision as of 13:05, 26 September 2014 by Kabi (talk | contribs) (Created page with " {| border="2" cellspacing="1" cellpadding="5" align="center" !Etch rate in !BHF !5% HF !30% HF |- |Wet Thermal Oxide [nm/min] |78.19 |24.89 |282.85 |- |Silicon Rich Nitride [...")
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Etch rate in BHF 5% HF 30% HF
Wet Thermal Oxide [nm/min] 78.19 24.89 282.85
Silicon Rich Nitride [nm/min] 0.33 0.60 2.6
Selectivity SiO2:SiN 189.36 41.64 119.83


The measured etch rates have been made and donated by Eric Jensen from DTU-Nanotech October 2013.