Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
Process Flow
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).
Equipment
Process Parameters
Comments
Pretreatment
4" Si wafers
No Pretreatment
Spin Coat
Spin Coater Manual, LabSpin, A-5
AR-P 6200/2 AllResist E-beam resist
60 sec at various spin speed.
Acceleration 4000 s-2,
softbake 1 - 5 min at 150 deg Celcius
Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist here.
Characterization
Ellipsometer VASE B-1
9 points measured on 100 mm wafer
ZEP program used; measured at 70 deg only
E-beam Exposure
JEOL 9500 E-beam writer, E-1
Dosepattern 15nm - 100nm,
dose 120-280 muC/cm2
Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
Development
Fumehood, D-3
60 sec in X AR 600-54/6,
60 sec rinse in IPA,
N2 Blow dry
Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
Characterization
Zeiss SEM Supra 60VP, D-3
2-3 kV, shortest working distance possible, chip mounted with Al tape
The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact Ramona Valentina Mateiu for further information.
Spin Curves
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
Dosepattern has been e-beam exposured and SEM inspected on those wafers marked by silver gray.
AllResist AR-P 6200/2 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
Spin Speed [rpm]
Acceleration [1/s2]
Thickness [nm]
St Dev
2000
4000
225.98
0.97
3000
4000
194.00
0.6
4000
4000
169.57
0.32
5000
4000
151.47
0.26
6000
4000
142.38
0.41
7000
4000
126.59
0.36
AllResist CSAR on Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm]
Acceleration [1/s2]
Thickness [nm]
St Dev
3000
4000
201.61
1.20
4000
4000
173.89
0.64
5000
4000
155.91
0.65
AllResist CSAR 1:1 in anisole, Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
3 kV, WD below 4mm, conducting tape close to pattern (29-08-2014 TIGRE)
SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm
300 [muC/cm2]
ACHK NOT READY
SEM inspection of wafer 6.13, 50 nm exposed pattern, shot pitch 7 nm
270 [muC/cm2]
ACHK NOT READY
300 [muC/cm2]
ACHK NOT READY
SEM inspection of wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
240 [muC/cm2]
ACHK NOT READY
270 [muC/cm2]
ACHK NOT READY
300 [muC/cm2]
ACHK NOT READY
SEM inspection of wafer 6.13, 20 nm exposed pattern, shot pitch 7 nm
270 [muC/cm2]
ACHK NOT READY
300 [muC/cm2]
ACHK NOT READY
wafer 4.09
The e-beam exposures presented here are written with 'SHOT A,10', i.e. a shot pitch of 5nm; this pitch works very well for large structures but not so well for 20nm or below. To illustrate this, ACHK screenshot are presented along with SEM inspection picures.
Process
Equipment
Parameters
Date and initials
Resist
Fumehood D-3
AR-P 6200/2 AllResist E-beam resist diluted 1:1 in anisole
16-06-2014 TIGRE
Spin Coat
Spin Coater LabSpin A-5
1 min @ 5000 rpm, 4000 1/s2, softbake 2 min @ 150 degC, thickness ~53nm
