Specific Process Knowledge/Thermal Process/Dope with Boron

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Dope with boron

The furnace A2 boron predep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers.

The concentration of boron in the wafer depends on the process temperature. The depth profile depends of the process time.

• Boron profiles from SIMS
• 
  1 hour, Temp=1125 ^oC
• 
  6 hours, Temp=1125 ^oC
• 
  16 hours, Temp=1125 ^oC

<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> image:borDiffusionDepthtable.jpg|Temp=1125 ^oC image:borDiffusionDepthplot.jpg|Temp=1125 ^oC