Specific Process Knowledge/Thin film deposition/Deposition of Germanium

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Deposition of Germanium

Germanium can be deposited by thermal evaporation and e-beam evaporation.


Thermal evaporation (Wordentec) E-beam evaporation (Physimeca)
General description Thermal deposition of Ge E-beam deposition of Ge
Pre-clean RF Ar clean -
Layer thickness 10Å to about 2000Å 10Å to about 3000Å
Deposition rate From 0.4 Å/s up to about ~2Å/s From 5 Å/s up to 10/s
Batch size
  • 24x 2" wafers or
  • 6x 4" wafers or
  • 6x 6" wafers
  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • III-V materials
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
Comment Recommended for unexposed e-beam resist .
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