Specific Process Knowledge/Thin film deposition/Deposition of TiW

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Deposition of TiW alloy can be done in the Wordentec.


Observe: right now we don´t have a TiW target for Wordentec, please contact thinfilm@danchip.dtu.dk if you are interested in depositing TiW.

Sputter deposition (Wordentec)
General description Sputter deposition of TiW
Pre-clean RF Ar clean
Layer thickness .
Deposition rate Depending on process parameters, see here.
Batch size
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comments TiW alloy: 10%/90% by weight


Deposited rates

This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see here) and may change with these settings.


Deposited film characteristics

AFM pictures show how the surface roughness is dependent of the process parameters, this can be seen here.

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