Specific Process Knowledge/Thin film deposition/Deposition of Copper

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Deposition of Cu

Copper can be deposited by e-beam evaporation or sputtering . In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Alcatel)	Sputter deposition (PVD co-sputter/evaporation)
General description	E-beam deposition of Cu	Sputter deposition of Cu
Pre-clean	RF Ar clean	RF Ar clean
Layer thickness	10Å to 0.5µm*	10Å to 1µm*
Deposition rate	2Å/s to 15Å/s	Depending on process parameters
Batch size	Up to 1x4" wafers smaller pieces	4x6" wafers or 12x4" wafers or 12x2" wafers
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Comment

* To deposit layers thicker then 200 nm permission is required (contact Thin film group)

Studies of Cu deposition processes

Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel

Cu sputtering in (PVD co-sputter/evaporation)

Process parameters are listed here: Cu sputter in PVD co-sputter/evaporation