Specific Process Knowledge/Thermal Process/Annealing

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Annealing

At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.

The furnace for oxidation are made so a 20 minutes N2 annealing step is include and it is not necessary to make one more.

Comparison of the annealing furnaces

C1: Anneal Oxide

C3: Anneal Bond

Noble furnace

Jipelec RTP

General description Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1. Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. Annealing of almost materials on silicon wafer. Rapid thermal annealing
Annealing gas
  • N2
  • N2
  • Ar
  • Wet annealing with bobbler (water steam + N2)
  • N2
  • Ar
  • N2
  • Vacuum is possible
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • 20 oC - 1000 oC
  • 20 oC - 1000 oC
  • Ramp up to 300 C/min
Substrate and Batch size
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafers
  • Small samples on carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on carrier wafer, horizontal
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers, vertical and horizontal
  • Small samples on carrier wafer
  • One 100 mm wafers on carrier wafer
Allowed materials
  • All processed wafers have to be RCA cleaned.
  • Except for wafers from LPCVD furnaces and PECVD1.
  • All processed wafers have to be RCA cleaned.
  • Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
  • Almost all materials, permission is need.
  • III-V samples
  • Silicon wafer
  • Some metals