Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide

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Deposition of Titanium Oxide

Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is IBE/IBSD Ionfab300. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.

Comparison of the methods for deposition of Titanium Oxide

Sputter technique using IBE/IBSD Ionfab300 Sputter System Lesker
Generel description
  • TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
 Generel description - method 2
Stoichiometry
  • Can probably be varied (sputter target: Ti, O2 added during deposition)
Film Thickness
  • ~10nm - ~0.5µm(>2h)
  • Thin layers
Deposition rate
  • 3.0-3.5nm/min
Step coverage
  • Not Known
Process Temperature
  • Expected to be below 100oC
More info on TiO2
Substrate size
  • 1 50mm wafer
  • 1 100mm wafer
  • 1 150mm wafer
  • 1 200mm wafer
  • Smaller pieces can be mounted with capton tape
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Almost any materials
  • not Pb and very poisonous materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
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