Specific Process Knowledge/Thin film deposition/Deposition of Silicon

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PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:

	Sputter (Alcatel)	Sputter(PVD co-sputter/evaporation)	Furnace PolySi (Furnace LPCVD pSi)	Sputter (Wordentec)	Sputter (IBE/IBSD Ionfab 300)
Batch size	Up to 1x4" wafers smaller pieces	4x6" wafers or 4x4" wafers or 4x2" wafers	. 1-25 wafers of 4" For other sizes ask the furnace team	24x2" wafers or 6x4" wafers or 6x6" wafers	.
Pre-clean	RF Ar clean	RF Ar clean	RCA clean for wafers that are not fresh form the box.	RF Ar clean	.
Layer thickness	10Å to 1µm	10Å to about 3000Å	~50Å to 2µm, if thicker layers are needed please ask the furnace team.	10Å to about 3000Å	.
Deposition rate	2Å/s to 15Å/s	Dependent on process parameters, but in the order of 1 Å/s. See more here	undoped, boron doped:~100Å/min Phospher doped:~20Å/min	. Dependent on process parameters, but in the order of 1 Å/s. See more here.	.
Process temperature	?	Option: heating wafer up to 400 deg C	560 oC (amorph) and 620 oC (poly)	?	.
Step coverage	Poor	.	Good	.	.
Adhesion	Bad for pyrex, for other materials we do not know	.	Good for fused silica, silicon oxide, silicon nitride, silicon	.	.
Allowed substrates	Silicon Pyrex Fused silica, , metals, oxide, nitride, blue tape	Pyrex, fused silica, silicon, metals, oxide, nitride	Fused silica, Silicon, oxide, nitride	Pyrex, fused silica, silicon, metals, oxide, nitride	.
Allowed material
Doping facility	None	None	Can be doped during deposition with Boron and/or Phosphorous	None	.

Sputtered Silicon in the Alcatel

The parameter(s) changed	New value(s)	Deposition rate
Standard parameters	None
Power	400W	3.8 Å/s

Sputtered Silicon in the PVD co-sputter/evaporation

See this page: Si sputter in PVD co-sputter/evaporation

Sputtered Silicon in Wordentec

See this page: Si sputter in Wordentec