Specific Process Knowledge/Etch/Etching of Chromium

Etching of Chromium

Etching of chromium is done wet at Danchip. We have two solution for this:

1. H$N{O}_3$:H${}_2$O:cerisulphate 90ml:1200ml:15g

Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)

	Chromium etch 1	Chromium etch 2
General description	Etch of chromium	Etch of chronium
Chemical solution	H${}_2$O:H${}_3$PO${}_4$ 1:2	PES 77-19-04
Process temperature	50 oC	20 oC
Possible masking materials:	Photoresist (1.5 µm AZ5214E)	Photoresist (1.5 µm AZ5214E)
Etch rate	~100 nm/min (Pure Al)	~60(??) nm/min
Batch size	1-25 wafers at a time	1-25 wafer at a time
Size of substrate	4" wafers	4" wafers
Allowed materials	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist