Specific Process Knowledge/Thermal Process/Furnace APOX

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Apox furnace (D1)

Apox furnace (D1): positioned in the III-V cleanroom area

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace.

Process knowledge

Overview of the performance of the Apox furnace and some process related parameters

Purpose

Oxidation and annealing

Oxidation:
  • Wet: With bubbler (water steam + O2)
Performance Film thickness
  • Wet oxide: Thicker than > 5 µm (APOX layers)
Process parameter range Process Temperature
  • 1150 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 0-10 slm
  • O2: 0-10 slm
Substrates Batch size
  • 1-200 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box)
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