Specific Process Knowledge/Etch/Etching of Aluminium

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Etching of Aluminium

Etching of aluminium is done wet at Danchip. We have two different solutions:

  1. HO:HPO 1:2 at 50 oC
  2. Pre-mixed etch solution: PES 77-19-04 at 20 oC


Comparing the two solutions

Aluminium Etch 1 Aluminium Etch 2
General description

Etch of pure aluminium

Etch of aluminium + 1.5% Si

Chemical solution HO:HPO 1:2 PES 77-19-04
Process temperature 50 oC 20 oC
Possible masking materials:

Photoresist (1.5 µm AZ5214E)

Photoresist (1.5 µm AZ5214E)

Etch rate

~100 nm/min (Pure Al)

~60(??) nm/min

Batch size

1-25 wafers at a time

1-25 wafer at a time

Size of substrate

4" wafers

4" wafers

Allowed materials
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist