Specific Process Knowledge/Thermal Process/Furnace APOX

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Apox furnace (D1)

D1 Furnace Apox: positioned in cleanroom ?

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 ^oC. Running a batch of apox wafers (oxide>5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in III-V cleanroom. Only Danchip employees are allowed to use the furnace.

Process knowledge

Oxidation: look at the Oxidation page

Overview of the performance of Apox furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Wet: with bubbler (water steam + N₂)
Performance	Film thickness	Wet SiO₂: used for layer thickness >5µm
Process parameter range	Process Temperature	1150 ^oC
	Process pressure	1 atm
	Gas flows	N₂:5 sccm
Substrates	Batch size	1-200 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box)