Specific Process Knowledge/Thermal Process/Furnace Noble

Noble furnace

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The Noble Furnace is mostlys used for annealing and oxidation of different samples. Also more dirty samples with metal are allowed in the furnace.

The maximum temperature of the Noble furnace is 1000 ^oC. The gas connections are N₂, O₂ and argon. Recently (Autumn 2013) a bubler for wet oxidaton has also been installed on the furnace.

The furnace is located in in service area 3.

This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius.

A1 Bor Drive-in furnace. Positioned in cleanroom 2

The user manual, technical information and contact information can be found in LabManager:

Noble furnace

Overview of the performance of the Noble Furnace

Purpose		Oxide growth, annealing
Process parameter range	Process Temperature	20-1000 oC
	Process pressure	1 atm
	Gasses on the system	N2:0-5 SLM O2: 0-5 SLM Argon: 0-7 SLM
Substrates	Batch size	1-25 4" wafer (or 2" wafers) per run
	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) Contact furnace@danchip.dtu.dk before annealing or oxidising metals in the furnace