Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE

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Test of etch in silicon nitride (LPCVD). 105nm nitride had to be removed - it was removed after 1min and 40s with a very small over etch in Si.

Parameter	1Nitride
Coil Power [W]	700
Platen Power [W]	100
Platen temperature [oC]	0
C$_{4}$F$_{8}$ flow [sccm]	5
He flow [sccm]	174
H$_{2}$ flow [sccm]	4
Pressure [mTorr]	4

Typical results	Resist mask	Resist mask
Silicon nitride (LPCVD) etch rate	~60 nm/min	99-108 nm/min (LN/BGE 20130512)
Selectivity to photo resist [:1]	?	~between 2.5 and 4.0 (LN/BGE 20130512)
Etch rate in Si	?	?
Etch rate in SiO2	?	?
Profile [o]	not tested	not tested
Etch uniforminty over a wafer [o]	not tested	± 1.1% to ±1.8% (Eric Jensen @nanotech, oct. 2013)
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