Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2

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Acceptance test for SiO2 deposition:

.	Acceptance Criteria	Acceptance Result 1	Acceptance Result 2
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	100 mm SSP Si wafer 525+-25 µm thick	100 mm SSP Si wafer 525+-25 µm thick
Material to be deposited	SiO2 The purpose of the SiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses): 1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material.	SiO2	SiO2
Deposition thickness	222nm	~215nm	224nm
Deposition rate	6 nm/min	7.42nm/min +- 0.04nm/min One standard deviation	7.73nm/min Only made once
Thickness uniformity	<+-1%	+-(0.46% +-0.10%)	+-0.45%
Reproducibility	<+-1.5%	+-0.6%	Not measured
Stress	<500MPa	~600MPa	475MPa
Refractive index	.	1.490+-0.004 (stddev wafer to wafer)	1.482+-0.002 (stddev on wafer)

	Recipe 1	Recipe 2
Platen angle	15 degrees	10 degrees
Platen rotation speed	20rpm	20rpm
Ar(N) flow	4 sccm	4 sccm
Ar(dep. source) flow	9 sccm	8 sccm
I(N)	310mA	320mA
Power	675W	700W
I(B)	310mA	280mA
V(B)	1200V	1100V
Vacc(B)	400V	400V
Deposition time	29min	37min

Other results

Roughness of the surface

Measured with the Optical profiler - PSI mode (on one sample from the acceptace test): Sa= 0.6nm