Specific Process Knowledge/Thin film deposition/Deposition of Silicon

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PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:

	Sputter (Alcatel)	Sputter(PVD co-sputter/evaporation)	Furnace PolySi (Furnace LPCVD pSi)	Sputter (Wordentec)	Sputter IBSD IonfabIBE/IBSD Ionfab 300
Batch size	Up to 1x4" wafers smaller pieces	4x6" wafers or 4x4" wafers or 4x2" wafers	. 1-25 wafers of 4" For other sizes ask the furnace team	24x2" wafers or 6x4" wafers or 6x6" wafers	.
Pre-clean	RF Ar clean	RF Ar clean	RCA clean for wafers that are not fresh form the box.	RF Ar clean	.
Layer thickness	10Å to 1µm	10Å to about 3000Å	~50Å to 2µm, if thicker layers are needed please ask the furnace team.	10Å to about 3000Å	.
Deposition rate	2Å/s to 15Å/s	Dependent on process parameters, but in the order of 1 Å/s. See more here	undoped, boron doped:~100Å/min Phospher doped:~20Å/min	. Dependent on process parameters, but in the order of 1 Å/s. See more here.	.
Process temperature	?	Option: heating wafer up to 400 deg C	560 oC (amorph) and 620 oC (poly)	?	.
Step coverage	Poor	.	Good	.	.
Adhesion	Bad for pyrex, for other materials we do not know	.	Good for fused silica, silicon oxide, silicon nitride, silicon	.	.
Substrate material allowed	Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape	Pyrex, fused silica, silicon, metals, oxide, nitride	Fused silica, Silicon, oxide, nitride	Pyrex, fused silica, silicon, metals, oxide, nitride	.
Doping facility	None	None	Can be doped during deposition with Boron and/or Phosphorous	None	.

Sputtered Silicon in the Alcatel

The parameter(s) changed	New value(s)	Deposition rate
Standard parameters	None
Power	400W	3.8 Å/s

Sputtered Silicon in the PVD co-sputter/evaporation

See this page: Si sputter in PVD co-sputter/evaporation

Sputtered Silicon in Wordentec

See this page: Si sputter in Wordentec