THIS PAGE IS UNDER CONSTRUCTION

Feedback to this page: click here

Boron Drive-in + Pre-dep furnace (A1)

A1 Boron Drive-in + Pre-dep furnace. Positioned in cleanroom 2

The Boron Drive-in + Pre-dep furnane (A1) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Boron pre-deposition takes place in the same furnace. The Boron Drive-in furnace can also be used for drive-in of boron which has been ion implanted.

The Boron Drive-in + Pre-dep furnace is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates that are allowed to enter this furnace. Check the cross contamination chart.

The user manual, quality control instruction and results, technical information and contact information can be found in LabManager:

Boron Drive-in furnace (A1)

Process knowledge

Boron drive-in: look at the Dope with Boron page
Oxidation: look at the Oxidation page
Annealing: look at the Annealing page

Overview of the performance of the boron drive-in furnace and some process related parameters

Purpose	Drive-in of boron Oxidation of silicon Oxidation of boron phase layer Annealing of the oxide	Oxidation: Dry Wet: with torch (H₂+O₂)
Performance	Film thickness	Dry SiO₂: 50 Å to ~2000 Å (takes too long to make it thicker) Wet SiO₂: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 ^oC
	Process pressure	1 atm
	Gasses on the system	O₂, H₂ and N₂
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new or RCA cleaned wafers) From A2 furnace directly (e.g. incl. Predep HF)