Upload log

Below is a list of the most recent file uploads. See the gallery of new files for a more visual overview.

• 15:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-060c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 15:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-060b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 15:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-060a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 15:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-030c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 15:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-030b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 15:20, 7 April 2011 Jml talk contribs uploaded File:WF 2E05 mar23 2011-030a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.32 recipe, Run ID 465, 466 and 467, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/30 coil/platen, 50 degs. 100 mm spacers)
• 15:18, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-150.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 15:18, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-120.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 15:17, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-090.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 15:17, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-060.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 15:17, 7 April 2011 Jml talk contribs uploaded File:WF 2E02 mar23 2011-030.jpg (The profiles of the 211 nm thick zep resist wafers (The E-batch of march 23 2011). The wafers have been over-exposed in the E-beam (400 µC/cm2) to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wide)
• 15:32, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-150c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-150b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-150a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-120c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-120b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-120a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:31, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-090c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:30, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-090b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:30, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-090a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:30, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-060c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:30, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-060b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:29, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-060a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:29, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-030c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:29, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-030b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 15:29, 6 April 2011 Jml talk contribs uploaded File:WF 2E04 mar23 2011-030a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 461, 462 and 463, time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs. 30 mm spacers)
• 13:42, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-150c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:42, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-150b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:42, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-150a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:42, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-120c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-120b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-120a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-090c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-090b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-090a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-060c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:41, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-060b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:40, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-060a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:40, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-030c.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:40, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-030b.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 13:40, 4 April 2011 Jml talk contribs uploaded File:WF 2E03 mar23 2011-030a.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.31 recipe, Run ID 452(abc), 453(bc) and 454 (c), time 60, 120 and 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 50 degs.)
• 15:02, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 150b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 15:02, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 150a.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 15:02, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 120b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 15:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 120a.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 15:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 090b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 15:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 090a.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 15:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 060b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 15:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 060a.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)
• 15:01, 30 March 2011 Jml talk contribs uploaded File:WF 2E01 mar23 2011 030b.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.3 recipe, Run ID 1856 (a) and 1857 (a+b), time 60 secs (a) and 120 secs (b), SF6 38, C4F8 52, 4mtorr, 600/40 coil/platen, -10 degs.)