Upload log

Below is a list of the most recent file uploads. See the gallery of new files for a more visual overview.

• 16:17, 24 March 2011 Jml talk contribs uploaded File:WF 2C4 feb2011 120.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.1 recipe, Run ID 1815, time 120 secs, SF6 38, C4F8 52, 4mtorr, 600/50 coil/platen, 10 degs.)
• 16:17, 24 March 2011 Jml talk contribs uploaded File:WF 2C4 feb2011 090.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.1 recipe, Run ID 1815, time 120 secs, SF6 38, C4F8 52, 4mtorr, 600/50 coil/platen, 10 degs.)
• 16:17, 24 March 2011 Jml talk contribs uploaded File:WF 2C4 feb2011 060.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.1 recipe, Run ID 1815, time 120 secs, SF6 38, C4F8 52, 4mtorr, 600/50 coil/platen, 10 degs.)
• 16:16, 24 March 2011 Jml talk contribs uploaded File:WF 2C4 feb2011 030.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.1 recipe, Run ID 1815, time 120 secs, SF6 38, C4F8 52, 4mtorr, 600/50 coil/platen, 10 degs.)
• 16:15, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-150.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 16:15, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-120.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 16:15, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-090.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 16:15, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-060.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 16:14, 24 March 2011 Jml talk contribs uploaded File:WF 2C3feb2011-030.jpg (Etching of nanostructures in Si using DRIE-Pegasus: nano1.0 recipe, Run ID 1801, time 120 secs, SF6 38, C4F8 52, 4mtorr, 800/50 coil/platen, 10 degs.)
• 12:43, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-150.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 12:43, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-120.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 12:42, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-090.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 12:42, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-060.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 12:42, 18 March 2011 Jml talk contribs uploaded File:WF 2C2 feb2011-030.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 444, time 300 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 12:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 150.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 12:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 120.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 12:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 090.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 12:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 060.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 12:29, 18 March 2011 Jml talk contribs uploaded File:WF 2C1 feb2011profile 030.jpg (The profiles of the 340 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 09:53, 16 March 2011 Jml talk contribs uploaded File:WF 2B1 feb06 2011-150.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 09:52, 16 March 2011 Jml talk contribs uploaded File:WF 2B1 feb06 2011-120.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 09:52, 16 March 2011 Jml talk contribs uploaded File:WF 2B1 feb06 2011-090.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 09:52, 16 March 2011 Jml talk contribs uploaded File:WF 2B1 feb06 2011-060.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 09:52, 16 March 2011 Jml talk contribs uploaded File:WF 2B1 feb06 2011-030.jpg (The profiles of the 180 nm thick zep resist wafers. The wafers have been over-exposed in the E-beam to make sure that all structures are opened - therefore the 30, 60, 90, 120 and 150 nm lines are somewhat wider.)
• 15:52, 15 March 2011 Jml talk contribs uploaded File:WF2B-6-feb06-2011-150nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.6 recipe, Run ID 441 and 442, time 180 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:52, 15 March 2011 Jml talk contribs uploaded File:WF2B-6-feb06-2011-120nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.6 recipe, Run ID 441 and 442, time 180 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:52, 15 March 2011 Jml talk contribs uploaded File:WF2B-6-feb06-2011-090nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.6 recipe, Run ID 441 and 442, time 180 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:52, 15 March 2011 Jml talk contribs uploaded File:WF2B-6-feb06-2011-060nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.6 recipe, Run ID 441 and 442, time 180 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:52, 15 March 2011 Jml talk contribs uploaded File:WF2B-6-feb06-2011-030nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.6 recipe, Run ID 441 and 442, time 180 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:51, 15 March 2011 Jml talk contribs uploaded File:WF2A-6-feb06-2011-150nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.5 recipe, Run ID 438 and 440, time 120 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:51, 15 March 2011 Jml talk contribs uploaded File:WF2A-6-feb06-2011-120nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.5 recipe, Run ID 438 and 440, time 120 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:50, 15 March 2011 Jml talk contribs uploaded File:WF2A-6-feb06-2011-090nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.5 recipe, Run ID 438 and 440, time 120 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:50, 15 March 2011 Jml talk contribs uploaded File:WF2A-6-feb06-2011-060nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.5 recipe, Run ID 438 and 440, time 120 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:50, 15 March 2011 Jml talk contribs uploaded File:WF2A-6-feb06-2011-030nm.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.5 recipe, Run ID 438 and 440, time 120 secs, Cl2 15, BCl3 5, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:49, 15 March 2011 Jml talk contribs uploaded File:WF 2B5 feb06 2011-150.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.4 recipe, Run ID 431, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/90 coil/platen, 20 degs.)
• 15:49, 15 March 2011 Jml talk contribs uploaded File:WF 2B5 feb06 2011-120.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.4 recipe, Run ID 431, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/90 coil/platen, 20 degs.)
• 15:49, 15 March 2011 Jml talk contribs uploaded File:WF 2B5 feb06 2011-090.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.4 recipe, Run ID 431, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/90 coil/platen, 20 degs.)
• 15:49, 15 March 2011 Jml talk contribs uploaded File:WF 2B5 feb06 2011-060.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.4 recipe, Run ID 431, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/90 coil/platen, 20 degs.)
• 15:49, 15 March 2011 Jml talk contribs uploaded File:WF 2B5 feb06 2011-030.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.4 recipe, Run ID 431, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/90 coil/platen, 20 degs.)
• 15:48, 15 March 2011 Jml talk contribs uploaded File:WF 2B4 feb06 2011-150.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 430 and 432, time 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 15:47, 15 March 2011 Jml talk contribs uploaded File:WF 2B4 feb06 2011-120.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 430 and 432, time 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 15:47, 15 March 2011 Jml talk contribs uploaded File:WF 2B4 feb06 2011-090.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 430 and 432, time 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 15:47, 15 March 2011 Jml talk contribs uploaded File:WF 2B4 feb06 2011-060.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 430 and 432, time 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 15:47, 15 March 2011 Jml talk contribs uploaded File:WF 2B4 feb06 2011-030.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.3 recipe, Run ID 430 and 432, time 180 secs, BCl3 5, HBr 15, 2mtorr, 900/75 coil/platen, 20 degs.)
• 15:46, 15 March 2011 Jml talk contribs uploaded File:WF 2B3 feb06 2011-150.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.2 recipe, Run ID 426 and 428, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:46, 15 March 2011 Jml talk contribs uploaded File:WF 2B3 feb06 2011-120.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.2 recipe, Run ID 426 and 428, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:45, 15 March 2011 Jml talk contribs uploaded File:WF 2B3 feb06 2011-090.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.2 recipe, Run ID 426 and 428, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:45, 15 March 2011 Jml talk contribs uploaded File:WF 2B3 feb06 2011-060.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.2 recipe, Run ID 426 and 428, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:45, 15 March 2011 Jml talk contribs uploaded File:WF 2B3 feb06 2011-030.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.2 recipe, Run ID 426 and 428, time 120 secs, BCl3 5, HBr 15, 2mtorr, 900/60 coil/platen, 20 degs.)
• 15:43, 15 March 2011 Jml talk contribs uploaded File:WF 2B2 feb06 2011-150.jpg (Etching of nanostructures in Si using the ICP metal etcher: Sinano3.1 recipe, Run ID 424 and 425 and 427, time 180 secs, BCl3 3, HBr 17, 2mtorr, 900/50 coil/platen, 20 degs.)